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Home > Hua > Hua Rawehake Utu > Transistors - Bipolar (BJT) - Kotahi > MJE18006G
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Maori
Maori
3445303Ataata MJE18006GAMI Semiconductor / ON Semiconductor

MJE18006G

Tono Tono

Tena koa whakaoti i nga mara e hiahiatia ana me to korero whakapā.Click "Tukuna RFQ" Ka whakapā atu maatau ki a koe i te imeera.Ranei imeera i a maatau:info@ftcelectronics.com
Uiui Ipurangi
Ngā whakaaturanga
  • Tau Wae
    MJE18006G
  • Kaihanga / Waitohu
    AMI Semiconductor/onsemi
  • Te rahi o te kararehe
    I roto i te taonga
  • Whakaahuatanga
    TRANS NPN 450V 6A TO-220AB
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Whakahaerehia te kore utu / RoHS
  • Ngā Rauemi
    MJE18006G.pdf
  • Ngaohihi - Te Whakatere Emitter Break (Max)
    450V
  • Utu Utu (Max) @ Ib, Ic
    700mV @ 600mA, 3A
  • Momo Pukapuka
    NPN
  • Pūrere Pūrere Whakarato
    TO-220AB
  • Raupapa
    SWITCHMODE™
  • Mana - Max
    100W
  • Packaging
    Tube
  • Paa / Case
    TO-220-3
  • Tae Mahi
    -65°C ~ 150°C (TJ)
  • Momo Tae
    Through Hole
  • Taumata Whakaaro Moe (MSL)
    1 (Unlimited)
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Lead free / RoHS Compliant
  • Tuhinga - Te whakawhiti
    14MHz
  • Whakaahuatanga Taipitopito
    Bipolar (BJT) Transistor NPN 450V 6A 14MHz 100W Through Hole TO-220AB
  • DC Ripa o Naianei (hFE) (Min) @ Ic, Vce
    6 @ 3A, 1V
  • I teie nei - Kohikohi Cutoff (Max)
    100µA
  • I teie nei - Kohikohi (Ic) (Max)
    6A

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