SI4459ADY-T1-GE3

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Te Aatau1 (I nga Utu US)

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$1.76

10+

$1.563

100+

$1.235

500+

$0.958

1000+

$0.756

Uiui Ipurangi

Ngā whakaaturanga

Tau Wae

SI4459ADY-T1-GE3
Kaihanga / Waitohu

Electro-Films (EFI) / Vishay
Te rahi o te kararehe

I roto i te taonga
Whakaahuatanga

MOSFET P-CH 30V 29A 8-SOIC
Whakahaere Toko Whakahaere / RoHS Tūnga

Whakahaerehia te kore utu / RoHS
Ngā Rauemi

SI4459ADY-T1-GE3.pdf
Vgs (th) (Max) @ Id

2.5V @ 250µA
Vgs (Max)

±20V
Hangarau

MOSFET (Metal Oxide)
Pūrere Pūrere Whakarato

8-SO
Raupapa

TrenchFET®
Runa I (Max) @ Id, Vgs

5 mOhm @ 15A, 10V
Whakaaetanga Mana (Max)

3.5W (Ta), 7.8W (Tc)
Packaging

Cut Tape (CT)
Paa / Case

8-SOIC (0.154", 3.90mm Width)
Ētahi Ingoa

SI4459ADY-T1-GE3CT
Tae Mahi

-55°C ~ 150°C (TJ)
Momo Tae

Surface Mount
Taumata Whakaaro Moe (MSL)

1 (Unlimited)
Te Tae Kaituku Taeke

32 Weeks
Whakahaere Toko Whakahaere / RoHS Tūnga

Lead free / RoHS Compliant
Whakauru Whakauru (Ciss) (Max) @ Vds

6000pF @ 15V
Puta Whakatau (Qg) (Max) @ Vgs

195nC @ 10V
Momo FET

P-Channel
FET Pānga

-
Kohikohi Whakaeke (Max Rds On, Min Rds On)

4.5V, 10V
Tuku ki te Pūtake Pūtake (Vdss)

30V
Whakaahuatanga Taipitopito

P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO
I teie nei - Ngaa Toa (Id) @ 25 ° C

29A (Tc)

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SI4459ADY-T1-GE3

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