SI4825DDY-T1-GE3

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Te Aatau1 (I nga Utu US)

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$1.12

10+

$0.991

100+

$0.784

500+

$0.608

1000+

$0.48

Uiui Ipurangi

Ngā whakaaturanga

Tau Wae

SI4825DDY-T1-GE3
Kaihanga / Waitohu

Electro-Films (EFI) / Vishay
Te rahi o te kararehe

I roto i te taonga
Whakaahuatanga

MOSFET P-CH 30V 14.9A 8SOIC
Whakahaere Toko Whakahaere / RoHS Tūnga

Whakahaerehia te kore utu / RoHS
Ngā Rauemi

SI4825DDY-T1-GE3.pdf
Vgs (th) (Max) @ Id

2.5V @ 250µA
Vgs (Max)

±25V
Hangarau

MOSFET (Metal Oxide)
Pūrere Pūrere Whakarato

8-SO
Raupapa

TrenchFET®
Runa I (Max) @ Id, Vgs

12.5 mOhm @ 10A, 10V
Whakaaetanga Mana (Max)

2.7W (Ta), 5W (Tc)
Packaging

Cut Tape (CT)
Paa / Case

8-SOIC (0.154", 3.90mm Width)
Ētahi Ingoa

SI4825DDY-T1-GE3CT
Tae Mahi

-55°C ~ 150°C (TJ)
Momo Tae

Surface Mount
Taumata Whakaaro Moe (MSL)

1 (Unlimited)
Te Tae Kaituku Taeke

32 Weeks
Whakahaere Toko Whakahaere / RoHS Tūnga

Lead free / RoHS Compliant
Whakauru Whakauru (Ciss) (Max) @ Vds

2550pF @ 15V
Puta Whakatau (Qg) (Max) @ Vgs

86nC @ 10V
Momo FET

P-Channel
FET Pānga

-
Kohikohi Whakaeke (Max Rds On, Min Rds On)

4.5V, 10V
Tuku ki te Pūtake Pūtake (Vdss)

30V
Whakaahuatanga Taipitopito

P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SO
I teie nei - Ngaa Toa (Id) @ 25 ° C

14.9A (Tc)

Ko enei e whai ake nei ko "SI4825DDY-T1-GE3" nga hua e pa ana.

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I roto i te taonga

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Kaihanga: Electro-Films (EFI) / Vishay

I roto i te taonga

RFQ

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I roto i te taonga

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I roto i te taonga

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SI4825DDY-T1-GE3

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