SI8407DB-T2-E1

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Uiui Ipurangi

Ngā whakaaturanga

Tau Wae

SI8407DB-T2-E1
Kaihanga / Waitohu

Electro-Films (EFI) / Vishay
Te rahi o te kararehe

I roto i te taonga
Whakaahuatanga

MOSFET P-CH 20V 5.8A 2X2 6-MFP
Whakahaere Toko Whakahaere / RoHS Tūnga

Whakahaerehia te kore utu / RoHS
Ngā Rauemi

SI8407DB-T2-E1.pdf
Vgs (th) (Max) @ Id

900mV @ 350µA
Vgs (Max)

±8V
Hangarau

MOSFET (Metal Oxide)
Pūrere Pūrere Whakarato

6-Micro Foot™ (1.5x1)
Raupapa

TrenchFET®
Runa I (Max) @ Id, Vgs

27 mOhm @ 1A, 4.5V
Whakaaetanga Mana (Max)

1.47W (Ta)
Packaging

Cut Tape (CT)
Paa / Case

6-MICRO FOOT®CSP
Ētahi Ingoa

SI8407DB-T2-E1CT
SI8407DBT2E1
Tae Mahi

-55°C ~ 150°C (TJ)
Momo Tae

Surface Mount
Taumata Whakaaro Moe (MSL)

1 (Unlimited)
Whakahaere Toko Whakahaere / RoHS Tūnga

Lead free / RoHS Compliant
Puta Whakatau (Qg) (Max) @ Vgs

50nC @ 4.5V
Momo FET

P-Channel
FET Pānga

-
Kohikohi Whakaeke (Max Rds On, Min Rds On)

1.8V, 4.5V
Tuku ki te Pūtake Pūtake (Vdss)

20V
Whakaahuatanga Taipitopito

P-Channel 20V 5.8A (Ta) 1.47W (Ta) Surface Mount 6-Micro Foot™ (1.5x1)
I teie nei - Ngaa Toa (Id) @ 25 ° C

5.8A (Ta)

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Kaihanga: Electro-Films (EFI) / Vishay

I roto i te taonga

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I roto i te taonga

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Kaihanga: Energy Micro (Silicon Labs)

I roto i te taonga

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SI8407DB-T2-E1

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