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Home > Hua > Hua Rawehake Utu > Transistors - Bipolar (BJT) - Kotahi, Whakamahia i > PDTB123YS,126

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3378743

PDTB123YS,126

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Tena koa whakaoti i nga mara e hiahiatia ana me to korero whakapā.Click "Tukuna RFQ" Ka whakapā atu maatau ki a koe i te imeera.Ranei imeera i a maatau:info@ftcelectronics.com

Uiui Ipurangi

Ngā whakaaturanga

Tau Wae

PDTB123YS,126
Kaihanga / Waitohu

Freescale / NXP Semiconductors
Te rahi o te kararehe

I roto i te taonga
Whakaahuatanga

TRANS PREBIAS PNP 500MW TO92-3
Whakahaere Toko Whakahaere / RoHS Tūnga

Whakahaerehia te kore utu / RoHS
Ngā Rauemi

PDTB123YS,126.pdf
Ngaohihi - Te Whakatere Emitter Break (Max)

50V
Utu Utu (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA
Momo Pukapuka

PNP - Pre-Biased
Pūrere Pūrere Whakarato

TO-92-3
Raupapa

-
Resistor - Emitter Base (R2)

10 kOhms
Resistor - Base (R1)

2.2 kOhms
Mana - Max

500mW
Packaging

Tape & Box (TB)
Paa / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Ētahi Ingoa

934059148126
PDTB123YS AMO
PDTB123YS AMO-ND
Momo Tae

Through Hole
Taumata Whakaaro Moe (MSL)

1 (Unlimited)
Whakahaere Toko Whakahaere / RoHS Tūnga

Lead free / RoHS Compliant
Whakaahuatanga Taipitopito

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3
DC Ripa o Naianei (hFE) (Min) @ Ic, Vce

70 @ 50mA, 5V
I teie nei - Kohikohi Cutoff (Max)

500nA
I teie nei - Kohikohi (Ic) (Max)

500mA
Tau Wae Tuakiri

PDTB123

Panui Whakapono
Hokona
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