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Home > Hua > Hua Rawehake Utu > Transistors - Bipolar (BJT) - Kotahi > BU808DFI
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5868640Ataata BU808DFISTMicroelectronics

BU808DFI

Tono Tono

Tena koa whakaoti i nga mara e hiahiatia ana me to korero whakapā.Click "Tukuna RFQ" Ka whakapā atu maatau ki a koe i te imeera.Ranei imeera i a maatau:info@ftcelectronics.com

Te Aatau1 (I nga Utu US)

I roto i te taonga
300+
$4.176
Uiui Ipurangi
Ngā whakaaturanga
  • Tau Wae
    BU808DFI
  • Kaihanga / Waitohu
    STMicroelectronics
  • Te rahi o te kararehe
    I roto i te taonga
  • Whakaahuatanga
    TRANS NPN DARL 700V ISOWATT218
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Whakahaerehia te kore utu / RoHS
  • Ngā Rauemi
    BU808DFI.pdf
  • Tauira ECAD
  • Ngaohihi - Te Whakatere Emitter Break (Max)
    700V
  • Utu Utu (Max) @ Ib, Ic
    1.6V @ 500mA, 5A
  • Momo Pukapuka
    NPN - Darlington
  • Pūrere Pūrere Whakarato
    ISOWATT-218
  • Raupapa
    -
  • Mana - Max
    52W
  • Packaging
    Tube
  • Paa / Case
    ISOWATT-218-3
  • Tae Mahi
    150°C (TJ)
  • Momo Tae
    Through Hole
  • Taumata Whakaaro Moe (MSL)
    1 (Unlimited)
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Lead free / RoHS Compliant
  • Tuhinga - Te whakawhiti
    -
  • Whakaahuatanga Taipitopito
    Bipolar (BJT) Transistor NPN - Darlington 700V 8A 52W Through Hole ISOWATT-218
  • DC Ripa o Naianei (hFE) (Min) @ Ic, Vce
    60 @ 5A, 5V
  • I teie nei - Kohikohi Cutoff (Max)
    400µA
  • I teie nei - Kohikohi (Ic) (Max)
    8A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

2024/09/27
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