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Home > Hua > Hua Rawehake Utu > Transistors - Bipolar (BJT) - Kotahi > BUL416
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6943082Ataata BUL416STMicroelectronics

BUL416

Tono Tono

Tena koa whakaoti i nga mara e hiahiatia ana me to korero whakapā.Click "Tukuna RFQ" Ka whakapā atu maatau ki a koe i te imeera.Ranei imeera i a maatau:info@ftcelectronics.com

Te Aatau1 (I nga Utu US)

I roto i te taonga
1000+
$1.507
Uiui Ipurangi
Ngā whakaaturanga
  • Tau Wae
    BUL416
  • Kaihanga / Waitohu
    STMicroelectronics
  • Te rahi o te kararehe
    I roto i te taonga
  • Whakaahuatanga
    TRANS NPN 800V 6A TO220
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Whakahaerehia te kore utu / RoHS
  • Ngā Rauemi
    BUL416.pdf
  • Ngaohihi - Te Whakatere Emitter Break (Max)
    800V
  • Utu Utu (Max) @ Ib, Ic
    3V @ 1.33A, 4A
  • Momo Pukapuka
    NPN
  • Pūrere Pūrere Whakarato
    TO-220AB
  • Raupapa
    -
  • Mana - Max
    110W
  • Packaging
    Tube
  • Paa / Case
    TO-220-3
  • Ētahi Ingoa
    497-6681-5
    BUL416-ND
    Q1659498
  • Tae Mahi
    150°C (TJ)
  • Momo Tae
    Through Hole
  • Taumata Whakaaro Moe (MSL)
    1 (Unlimited)
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Lead free / RoHS Compliant
  • Tuhinga - Te whakawhiti
    -
  • Whakaahuatanga Taipitopito
    Bipolar (BJT) Transistor NPN 800V 6A 110W Through Hole TO-220AB
  • DC Ripa o Naianei (hFE) (Min) @ Ic, Vce
    12 @ 700mA, 5V
  • I teie nei - Kohikohi Cutoff (Max)
    250µA
  • I teie nei - Kohikohi (Ic) (Max)
    6A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

2024/09/27
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