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Home > Hua > Hua Rawehake Utu > Transistors - Bipolar (BJT) - Kotahi > SGSD100
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2014151Ataata SGSD100STMicroelectronics

SGSD100

Tono Tono

Tena koa whakaoti i nga mara e hiahiatia ana me to korero whakapā.Click "Tukuna RFQ" Ka whakapā atu maatau ki a koe i te imeera.Ranei imeera i a maatau:info@ftcelectronics.com

Te Aatau1 (I nga Utu US)

I roto i te taonga
600+
$1.917
Uiui Ipurangi
Ngā whakaaturanga
  • Tau Wae
    SGSD100
  • Kaihanga / Waitohu
    STMicroelectronics
  • Te rahi o te kararehe
    I roto i te taonga
  • Whakaahuatanga
    TRANS NPN DARL 80V 25A TO-247
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Whakahaerehia te kore utu / RoHS
  • Ngā Rauemi
    SGSD100.pdf
  • Ngaohihi - Te Whakatere Emitter Break (Max)
    80V
  • Utu Utu (Max) @ Ib, Ic
    3.5V @ 80mA, 20A
  • Momo Pukapuka
    NPN - Darlington
  • Pūrere Pūrere Whakarato
    TO-247-3
  • Raupapa
    -
  • Mana - Max
    130W
  • Packaging
    Tube
  • Paa / Case
    TO-247-3
  • Ētahi Ingoa
    497-6727-5
    SGSD100-ND
  • Tae Mahi
    -
  • Momo Tae
    Through Hole
  • Taumata Whakaaro Moe (MSL)
    1 (Unlimited)
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Lead free / RoHS Compliant
  • Tuhinga - Te whakawhiti
    -
  • Whakaahuatanga Taipitopito
    Bipolar (BJT) Transistor NPN - Darlington 80V 25A 130W Through Hole TO-247-3
  • DC Ripa o Naianei (hFE) (Min) @ Ic, Vce
    500 @ 10A, 3V
  • I teie nei - Kohikohi Cutoff (Max)
    500µA
  • I teie nei - Kohikohi (Ic) (Max)
    25A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

2024/09/27
Kaipuke
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