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Home > Hua > Hua Rawehake Utu > Transistors - Bipolar (BJT) - Kotahi, Whakamahia i > RN1101MFV,L3F
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2651869Ataata RN1101MFV,L3FToshiba Semiconductor and Storage

RN1101MFV,L3F

Tono Tono

Tena koa whakaoti i nga mara e hiahiatia ana me to korero whakapā.Click "Tukuna RFQ" Ka whakapā atu maatau ki a koe i te imeera.Ranei imeera i a maatau:info@ftcelectronics.com

Te Aatau1 (I nga Utu US)

I roto i te taonga
8000+
$0.027
Uiui Ipurangi
Ngā whakaaturanga
  • Tau Wae
    RN1101MFV,L3F
  • Kaihanga / Waitohu
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Te rahi o te kararehe
    I roto i te taonga
  • Whakaahuatanga
    TRANS PREBIAS NPN 50V SOT723
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Whakahaerehia te kore utu / RoHS
  • Ngā Rauemi
    RN1101MFV,L3F.pdf
  • Tauira ECAD
  • Ngaohihi - Te Whakatere Emitter Break (Max)
    50V
  • Utu Utu (Max) @ Ib, Ic
    300mV @ 500µA, 5mA
  • Momo Pukapuka
    NPN - Pre-Biased
  • Pūrere Pūrere Whakarato
    VESM
  • Raupapa
    -
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Mana - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Paa / Case
    SOT-723
  • Ētahi Ingoa
    RN1101MFV,L3F(B
    RN1101MFV,L3F(T
    RN1101MFVL3FTR
  • Momo Tae
    Surface Mount
  • Whakahaere Toko Whakahaere / RoHS Tūnga
    Lead free / RoHS Compliant
  • Whakaahuatanga Taipitopito
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
  • DC Ripa o Naianei (hFE) (Min) @ Ic, Vce
    30 @ 10mA, 5V
  • I teie nei - Kohikohi Cutoff (Max)
    500nA
  • I teie nei - Kohikohi (Ic) (Max)
    100mA

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