SI2367DS-T1-GE3

Tono Tono

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Te Aatau1 (I nga Utu US)

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3000+

$0.16

Uiui Ipurangi

Ngā whakaaturanga

Tau Wae

SI2367DS-T1-GE3
Kaihanga / Waitohu

Electro-Films (EFI) / Vishay
Te rahi o te kararehe

I roto i te taonga
Whakaahuatanga

MOSFET P-CH 20V 3.8A SOT-23
Whakahaere Toko Whakahaere / RoHS Tūnga

Whakahaerehia te kore utu / RoHS
Ngā Rauemi

SI2367DS-T1-GE3.pdf
Vgs (th) (Max) @ Id

1V @ 250µA
Vgs (Max)

±8V
Hangarau

MOSFET (Metal Oxide)
Pūrere Pūrere Whakarato

SOT-23-3 (TO-236)
Raupapa

TrenchFET®
Runa I (Max) @ Id, Vgs

66 mOhm @ 2.5A, 4.5V
Whakaaetanga Mana (Max)

960mW (Ta), 1.7W (Tc)
Packaging

Tape & Reel (TR)
Paa / Case

TO-236-3, SC-59, SOT-23-3
Ētahi Ingoa

SI2367DS-T1-GE3-ND
SI2367DS-T1-GE3TR
SI2367DST1GE3
Tae Mahi

-55°C ~ 150°C (TJ)
Momo Tae

Surface Mount
Taumata Whakaaro Moe (MSL)

1 (Unlimited)
Whakahaere Toko Whakahaere / RoHS Tūnga

Lead free / RoHS Compliant
Whakauru Whakauru (Ciss) (Max) @ Vds

561pF @ 10V
Puta Whakatau (Qg) (Max) @ Vgs

23nC @ 8V
Momo FET

P-Channel
FET Pānga

-
Kohikohi Whakaeke (Max Rds On, Min Rds On)

1.8V, 4.5V
Tuku ki te Pūtake Pūtake (Vdss)

20V
Whakaahuatanga Taipitopito

P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
I teie nei - Ngaa Toa (Id) @ 25 ° C

3.8A (Tc)

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I roto i te taonga

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Rēhitatanga whakamua

SI2367DS-T1-GE3

Tono Tono

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