SI2369DS-T1-GE3

Tono Tono

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Te Aatau1 (I nga Utu US)

I roto i te taonga

3000+

$0.161

Uiui Ipurangi

Ngā whakaaturanga

Tau Wae

SI2369DS-T1-GE3
Kaihanga / Waitohu

Electro-Films (EFI) / Vishay
Te rahi o te kararehe

I roto i te taonga
Whakaahuatanga

MOSFET P-CH 30V 7.6A TO-236
Whakahaere Toko Whakahaere / RoHS Tūnga

Whakahaerehia te kore utu / RoHS
Ngā Rauemi

SI2369DS-T1-GE3.pdf
Vgs (th) (Max) @ Id

2.5V @ 250µA
Vgs (Max)

±20V
Hangarau

MOSFET (Metal Oxide)
Pūrere Pūrere Whakarato

TO-236
Raupapa

TrenchFET®
Runa I (Max) @ Id, Vgs

29 mOhm @ 5.4A, 10V
Whakaaetanga Mana (Max)

1.25W (Ta), 2.5W (Tc)
Packaging

Tape & Reel (TR)
Paa / Case

TO-236-3, SC-59, SOT-23-3
Ētahi Ingoa

SI2369DS-T1-GE3TR
Tae Mahi

-55°C ~ 150°C (TJ)
Momo Tae

Surface Mount
Taumata Whakaaro Moe (MSL)

1 (Unlimited)
Te Tae Kaituku Taeke

32 Weeks
Whakahaere Toko Whakahaere / RoHS Tūnga

Lead free / RoHS Compliant
Whakauru Whakauru (Ciss) (Max) @ Vds

1295pF @ 15V
Puta Whakatau (Qg) (Max) @ Vgs

36nC @ 10V
Momo FET

P-Channel
FET Pānga

-
Kohikohi Whakaeke (Max Rds On, Min Rds On)

4.5V, 10V
Tuku ki te Pūtake Pūtake (Vdss)

30V
Whakaahuatanga Taipitopito

P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236
I teie nei - Ngaa Toa (Id) @ 25 ° C

7.6A (Tc)

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I roto i te taonga

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Tuhia to wa inaianei!

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SI2369DS-T1-GE3

Tono Tono

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